Mössbauer effect and lattice parameter for silicon doped with antimony

J.R. Teague, C.M. Yagnik, G.J. Long, Robert Gerson, L.D. Lafleur

Solid State Communications 9 (19) 1695-1698 (1971) · Elsevier BV

DOI: 10.1016/0038-1098(71)90343-7

Data: JSON record · id doi:10.1016/0038-1098(71)90343-7 · metadata: crossref

Roles in ORCHID

cited as the original source of values

Systems

Evidence in ORCHID

1 values in 1 other papers cite this work as their source.

Cited values by evidence class
experimental	1

Availability

Read by ORCHID: no (full_text_screened_for_origin). Open-access licence (Crossref license field): none deposited. Crossref is-referenced-by count: 11 (retrieved 2026-10-23).

Relations

Cited by (Crossref reference lists) (1)

The Sb-Si (Antimony-Silicon) system (1985) [crossref_reference_list]

Cited for values by (1)

The Sb-Si (Antimony-Silicon) system (1985) — 1 values [orchid_extraction]

Used in (assessments / papers that took values from it) (1)

The Sb-Si (Antimony-Silicon) system (1985) — 1 values [orchid_extraction]