{"assessments":[{"data_papers_used":[{"doi":"10.1016/0022-5088(88)90148-8","evidence_class":{"experimental":9},"id":"doi:10.1016/0022-5088(88)90148-8","key":"pe931b39fb4e7fb10","n_values":9,"n_values_accepted":5,"title":"The osmium-silicon phase diagram","year":1988},{"doi":"10.1016/0022-0248(83)90424-4","evidence_class":{"experimental":4},"id":"doi:10.1016/0022-0248(83)90424-4","key":"pc5b74b61c4537da3","n_values":4,"n_values_accepted":2,"title":"Osmium disilicide: Preparation, crystal growth, and physical properties of a new semiconducting compound","year":1983},{"doi":"10.1016/0022-5088(62)90055-3","evidence_class":{"experimental":2},"id":"doi:10.1016/0022-5088(62)90055-3","key":"pf0dd99da0827fdc8","n_values":2,"n_values_accepted":1,"title":"Structures and compositions of the silicides of ruthenium, osmium, rhodium and iridium","year":1962}],"doi":"10.1016/s0925-8388(01)00931-8","id":"doi:10.1016/s0925-8388(01)00931-8","key":"pedd23631e828a2d9","n_data_papers_used":3,"n_values_from_cited_papers":15,"reassesses":[],"tdb_files":["OsSi-01Liu-LB.tdb"],"title":"Thermodynamic assessment of the Ru–Si and Os–Si systems","values_reported":81,"year":2001}],"cite_as":{"also_cite":["the papers themselves when you use their data (doi / citation of each bibliography record)"],"bibtex":"@misc{orchid_bibliography_2026,\n  author    = {Arr{\\'o}yave, Raymundo and Saal, James and Shin, Dongwon},\n  title     = {{ORCHID-Bibliography: papers and typed citation relations}},\n  version   = {2026.10},\n  publisher = {Zenodo},\n  year      = {2026},\n  doi       = {10.5281/zenodo.23736021},\n  url       = {https://doi.org/10.5281/zenodo.23736021},\n  note      = {Version 1, machine-extracted}\n}","dataset":"bibliography","doi":"10.5281/zenodo.23736021","licence_note":"Crossref bibliographic metadata: CC0; ORCHID-derived fields (roles, evidence counts, relations): CC BY 4.0","license":"CC-BY-4.0","part_of":{"bibtex":"@misc{orchid_data_2026,\n  author    = {Arr{\\'o}yave, Raymundo and Saal, James and Shin, Dongwon},\n  title     = {{ORCHID data: umbrella record of the ORCHID datasets}},\n  version   = {2026.10},\n  publisher = {Zenodo},\n  year      = {2026},\n  doi       = {10.5281/zenodo.23736065},\n  url       = {https://doi.org/10.5281/zenodo.23736065},\n  note      = {Version 1, machine-extracted}\n}","doi":"10.5281/zenodo.23736065","text":"R. Arróyave, J. Saal, D. Shin, ORCHID data: umbrella record of the ORCHID datasets (version 2026.10; Version 1, machine-extracted), Zenodo (2026). https://doi.org/10.5281/zenodo.23736065","title":"ORCHID data: umbrella record of the ORCHID datasets","url":"https://doi.org/10.5281/zenodo.23736065"},"release_tag":"v2026.10","status":"Version 1, machine-extracted: roles and evidence counts derive from machine-extracted literature values and link tables; bibliographic fields are Crossref metadata as deposited (DOIs matched from printed references checked against Crossref: doi_match; mismatches dropped).","text":"R. Arróyave, J. Saal, D. Shin, ORCHID-Bibliography: papers and typed citation relations (version 2026.10; Version 1, machine-extracted), Zenodo (2026). https://doi.org/10.5281/zenodo.23736021","title":"ORCHID-Bibliography: papers and typed citation relations","url":"https://doi.org/10.5281/zenodo.23736021","version":"2026.10"},"elements":["OS","SI"],"papers":[{"doi":"10.1016/0022-0248(83)90424-4","id":"doi:10.1016/0022-0248(83)90424-4","key":"pc5b74b61c4537da3","title":"Osmium disilicide: Preparation, crystal growth, and physical properties of a new semiconducting compound","year":1983},{"doi":"10.1016/0022-5088(62)90055-3","id":"doi:10.1016/0022-5088(62)90055-3","key":"pf0dd99da0827fdc8","title":"Structures and compositions of the silicides of ruthenium, osmium, rhodium and iridium","year":1962},{"doi":"10.1016/0022-5088(88)90148-8","id":"doi:10.1016/0022-5088(88)90148-8","key":"pe931b39fb4e7fb10","title":"The osmium-silicon phase diagram","year":1988},{"doi":"10.1016/s0925-8388(01)00931-8","id":"doi:10.1016/s0925-8388(01)00931-8","key":"pedd23631e828a2d9","title":"Thermodynamic assessment of the Ru–Si and Os–Si systems","year":2001}],"papers_by_role":{"cited_original_source":["doi:10.1016/0022-0248(83)90424-4","doi:10.1016/0022-5088(62)90055-3","doi:10.1016/0022-5088(88)90148-8","doi:10.1016/s0925-8388(01)00931-8"],"corpus_assessment_read":["doi:10.1016/s0925-8388(01)00931-8"],"handbook_diagram_source":["doi:10.1016/s0925-8388(01)00931-8"],"tdb_source_assessment":["doi:10.1016/s0925-8388(01)00931-8"]},"system":"OS-SI"}