GaN: enthalpy of formation

8 accepted literature formation-enthalpy value(s) (experimental 1, unspecified 7); experimental median -52.1 kJ/mol-atom (n = 1); Materials Project -63.373 kJ/mol-atom (mp-aaaaabey); OQMD -55.891 kJ/mol-atom (oqmd-6450).

Systems: Ga–N

Literature values

Enthalpy of formation of GaN reported in the literature (8)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-52.1 kJ/mol-atom ± 2GaN298.15experimentalCombustion calorimetryGa–N[1] Unland 2003
cites Hahn 1940 doi
Table 2, p. 3, row 1
report
-157.7 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites Madar 1975
Table AI, p. 18, row 25
report
-157.7 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites Karpinski 1984
Table AI, p. 18, row 26
report
-156.8 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites Ranade 2000
Table AI, p. 18, row 27
report
-140.2 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites MacChesney 1970
Table AI, p. 18, row 30
report
-140 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites Unland
Table AI, p. 18, row 17
report
-117.1 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites Davydov 1999
Table AI, p. 18, row 18
report
-104.2 kJ/mol (basis unstated)GaN298.15unspecifiedGa–N[2] Onderka 2002
cites Hahn 1940
Table AI, p. 18, row 24
report

Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of GaN
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-52.1kJ/mol-atom20.0251 (combustion_calorimetry, cleaned_below_threshold)2
-157.7kJ/mol (basis unstated)0.057 (unknown, calibrated)7
-157.7kJ/mol (basis unstated)0.057 (unknown, calibrated)7
-156.8kJ/mol (basis unstated)0.057 (unknown, calibrated)7
-140.2kJ/mol (basis unstated)0.057 (unknown, calibrated)7
-140kJ/mol (basis unstated)0.057 (unknown, calibrated)7
-117.1kJ/mol (basis unstated)0.057 (unknown, calibrated)7
-104.2kJ/mol (basis unstated)0.057 (unknown, calibrated)7

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of GaN
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaaaabey-63.373-0.656817P6_3mc00no
OQMDoqmd-6450-55.891-0.57927P63mc00no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. J. Unland, B. Onderka, A. Davydov, R. Schmid-Fetzer, Thermodynamics and Phase Stability in the Ga–N System, Journal of Crystal Growth 256, 33-51 (2003). doi:10.1016/s0022-0248(03)01352-6
  2. B. Onderka, J. Unland, R. Schmid-Fetzer, Thermodynamics and phase stability in the In–N system, J. Mater. Res. 17, 3065-3083 (2002). doi:10.1557/jmr.2002.0445