Hf5Si3: enthalpy of formation

2 accepted literature formation-enthalpy value(s) (experimental 1, unspecified 1); experimental median -70.2 kJ/mol-atom (n = 1); Materials Project -69.268 kJ/mol-atom (mp-aaaaaxqb); OQMD -71.886 kJ/mol-atom (oqmd-647084).

Systems: Hf–Si

Literature values

Enthalpy of formation of Hf5Si3 reported in the literature (2)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-70.2 kJ/mol-atom ± 3.3Hf5Si3298.15experimentalHf–Si[1] Zhao 2000
cites Golutvin 1971
Table 3, p. 3, row 4
report
-70.2 kJ/mol-atomHf5Si3298.15unspecifiedHf–Si[1] Zhao 2000
cites Samsonov 1980 doi
Table 3, p. 3, row 5
report

Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of Hf5Si3
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-70.2kJ/mol-atom3.30.053.5 (unknown, calibrated)3.5
-70.2kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of Hf5Si3
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaaaaxqb-69.268-0.717916P6_3/mcm3.22150.0334no
OQMDoqmd-647084-71.886-0.745045P63/mcm3.29490.0341no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. J. -C. Zhao, B. P. Bewlay, M. R. Jackson, Q. Chen, Hf-Si binary phase diagram determination and thermodynamic modeling, JPE 21, 40-45 (2000). doi:10.1361/105497100770340408