HfSi: enthalpy of formation
3 accepted literature formation-enthalpy value(s) (experimental 2, unspecified 1); experimental median -71 kJ/mol-atom (n = 2); Materials Project -75.502 kJ/mol-atom (mp-aaaaaboc); OQMD -79.13 kJ/mol-atom (oqmd-647082).
Systems: Hf–Si
Literature values
| Value | Phase as printed | T (K) | Class | Method | System | Source | Location | Quote |
|---|---|---|---|---|---|---|---|---|
| -71.1 kJ/mol-atom ± 4.6 | HfSi | 298.15 | experimental | Hf–Si | [1] Zhao 2000 cites Golutvin 1971 | Table 3, p. 3, row 12 report | ||
| -70.9 kJ/mol-atom ± 2 | HfSi | 1473 | experimental | Hf–Si | [1] Zhao 2000 cites Meschel 1998 doi | Table 3, p. 3, row 15 report | ||
| -71.1 kJ/mol-atom | HfSi | 298.15 | unspecified | Hf–Si | [1] Zhao 2000 cites Samsonov 1980 doi | Table 3, p. 3, row 13 report |
Uncertainty budget
Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.
| Value | Unit | Printed | Reading | Method (class, basis) | Composition | Scatter | Conversion | Effective |
|---|---|---|---|---|---|---|---|---|
| -71.1 | kJ/mol-atom | 4.6 | 0.05 | 3.5 (unknown, calibrated) | 4.6 | |||
| -70.9 | kJ/mol-atom | 2 | 0.05 | 3.5 (unknown, calibrated) | 3.5 | |||
| -71.1 | kJ/mol-atom | 0.05 | 3.5 (unknown, calibrated) | 3.5 |
DFT formation energies
Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.
| Source | Entry | kJ/mol-atom | eV/atom | Space group | E above hull (kJ/mol-atom) | E above hull (eV/atom) | Theoretical |
|---|---|---|---|---|---|---|---|
| Materials Project | mp-aaaaaboc | -75.502 | -0.78253 | Pnma | 0 | 0 | no |
| OQMD | oqmd-647082 | -79.13 | -0.820127 | Pnma | 0 | 0 | no |
DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);
Sources
- J. -C. Zhao, B. P. Bewlay, M. R. Jackson, Q. Chen, Hf-Si binary phase diagram determination and thermodynamic modeling, JPE 21, 40-45 (2000). doi:10.1361/105497100770340408