Si2V: enthalpy of formation

19 accepted literature formation-enthalpy value(s) (experimental 9, model 7, DFT 2, unspecified 1); experimental median -41.67 kJ/mol-atom (n = 9); Materials Project -42.137 kJ/mol-atom (mp-aaaaapvz); OQMD -45.955 kJ/mol-atom (oqmd-16520).

Systems: Si–V

Literature values

Enthalpy of formation of Si2V reported in the literature (19)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-44.43 kJ/mol-atom ± 1VSi2298.15experimentalFluorine bomb calorimetrySi–V[1] Zhang 2008
cites OHare 1999 doi
Table 2, p. 3, row 13
report
-44.4 kJ/mol-atom ± 1VSi2298.15experimentalSi–V[2] Broz 2013
cites P 1999
Table 2, p. 6, row 39
report
-44.4 kJ/mol-atom ± 1Si2V298.15experimentalExpSi–V[3] Luo 2018
cites OHare 2000
Table 3, p. 5, row 24
report
-41.7 kJ/mol-atom ± 3VSi2298.15experimentalSi–V[2] Broz 2013
cites Gorelkin 1971
Table 2, p. 6, row 36
report
-41.67 kJ/mol-atom ± 3VSi2298.15experimentalDirect reaction calorimetrySi–V[1] Zhang 2008
cites Gorelkin 1971
Table 2, p. 3, row 1
report
-41.5 kJ/mol-atom ± 2VSi2298.15experimentalemf measurementSi–V[1] Zhang 2008
cites Eremenko 1976
Table 2, p. 3, row 4
report
-41.5 kJ/mol-atom ± 2VSi2298.15experimentalSi–V[2] Broz 2013
cites Eremenko 1975
Table 2, p. 6, row 37
report
-39.7 kJ/mol-atom ± 1VSi2298.15experimentalSi–V[2] Broz 2013
cites Storms 1985
Table 2, p. 6, row 38
report
-39.67 kJ/mol-atom ± 1VSi2298.15experimentalKnudsen cell mass spectrometrySi–V[1] Zhang 2008
cites Storms 1985
Table 2, p. 3, row 8
report
-54.674 kJ/mol-atomSi2VmodelSi–V[3] Luo 2018Table 3, p. 5, row 23
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-54.1 kJ/mol-atomSi2VmodelCalphadSi–V[3] Luo 2018
cites Zhang 2008 doi
Table 3, p. 5, row 21
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-54.1 kJ/mol-atomVSi20modelSi–V[2] Broz 2013
cites Zhang 2008 doi
Table 2, p. 6, row 42
report
-45.9 kJ/mol-atomVSi2modelSi–V[2] Broz 2013
cites Zhang 2007 doi
Table 2, p. 6, row 41
report
-29 kJ/mol-atomVSi2modelSi–V[2] Broz 2013
cites Chen 2006 doi
Table 2, p. 6, row 40
report
-29 kJ/mol-atomVSi2298.15modelMiedema modelSi–V[1] Zhang 2008
cites Chen 2006 doi
Table 2, p. 3, row 15
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-8.285 kJ/mol-atomSi2VmodelSi–V[3] Luo 2018Table 3, p. 5, row 25
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-47 kJ/mol-atomSi2V0DFTDFTSi–V[3] Luo 2018
cites Broz 2013 doi
Table 3, p. 5, row 22
report
-45.91 kJ/mol-atomVSi2298.15DFTFirst-principlesSi–V[1] Zhang 2008
cites Zhang 2007 doi
Table 2, p. 3, row 19
report
-47 kJ/mol-atomVSi20unspecifiedSi–V[2] Broz 2013Table 2, p. 6, row 35
report

Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of Si2V
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-44.43kJ/mol-atom10.0051 (combustion_calorimetry, cleaned_below_threshold)1
-44.4kJ/mol-atom10.053.5 (unknown, calibrated)3.5
-44.4kJ/mol-atom10.054.1 (experimental_unspecified, cleaned_below_threshold)4.1
-41.7kJ/mol-atom30.053.5 (unknown, calibrated)3.5
-41.67kJ/mol-atom30.0053.2 (solution_reaction_calorimetry, calibrated)3.2
-41.5kJ/mol-atom20.054.6 (emf, cleaned_below_threshold)4.6
-41.5kJ/mol-atom20.053.5 (unknown, calibrated)3.5
-39.7kJ/mol-atom10.053.5 (unknown, calibrated)3.5
-39.67kJ/mol-atom10.0054.2 (kems_vapour, calibrated)4.2
-54.674kJ/mol-atom5.000e-43.9 (model_calculated, calibrated)3.9
-54.1kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-54.1kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-45.9kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-29kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-29kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-8.285kJ/mol-atom5.000e-43.9 (model_calculated, calibrated)3.9
-47kJ/mol-atom0.059.966 (dft, calibrated)9.966
-45.91kJ/mol-atom0.0059.966 (dft, calibrated)9.966
-47kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of Si2V
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaaaapvz-42.137-0.436721P6_22200no
OQMDoqmd-16520-45.955-0.476293P642200no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. Chao Zhang, Yong Du, Wei Xiong, Honghui Xu, Philip Nash, Yifang Ouyang et al., Thermodynamic modeling of the V–Si system supported by key experiments, Calphad 32, 320-325 (2008). doi:10.1016/j.calphad.2007.12.005
  2. P. Broz, A.U. Khan, H. Niu, X.-Q. Chen, D. Li, J. Vrestal et al., The system Ta–V–Si: Thermodynamic modeling, Journal of Solid State Chemistry 199, 171-180 (2013). doi:10.1016/j.jssc.2012.12.003
  3. Qun Luo, Kang Li, Qian Li, Thermodynamic investigation of phase equilibria in Al–Si–V system, Journal of Materials Science & Technology 34, 1592-1601 (2018). doi:10.1016/j.jmst.2018.01.004