Si3V: enthalpy of formation

2 accepted literature formation-enthalpy value(s) (model 1, unspecified 1); OQMD 1.542 kJ/mol-atom (oqmd-2031400).

Systems: Si–V

Literature values

Enthalpy of formation of Si3V reported in the literature (2)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
54.3 kJ/mol-atomSi3V0modelSi–V[1] Broz 2013
cites Zhang 2008 doi
Table 2, p. 6, row 20
report
6.3 kJ/mol-atomSi3V0unspecifiedSi–V[1] Broz 2013Table 2, p. 6, row 19
report

Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of Si3V
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
54.3kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
6.3kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of Si3V
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
OQMDoqmd-20314001.5420.015982I-436.00830.3732yes

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. P. Broz, A.U. Khan, H. Niu, X.-Q. Chen, D. Li, J. Vrestal et al., The system Ta–V–Si: Thermodynamic modeling, Journal of Solid State Chemistry 199, 171-180 (2013). doi:10.1016/j.jssc.2012.12.003