Si3V5: enthalpy of formation

20 accepted literature formation-enthalpy value(s) (experimental 9, model 8, DFT 2, unspecified 1); experimental median -58.1 kJ/mol-atom (n = 9); Materials Project -53.719 kJ/mol-atom (mp-aaabgjfz); OQMD -55.174 kJ/mol-atom (oqmd-31069).

Systems: Si–V

Literature values

Enthalpy of formation of Si3V5 reported in the literature (20)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-59 kJ/mol-atom ± 2V5Si3298.15experimentalDirect synthesis calorimetrySi–V[1] Zhang 2008
cites Meschel 1998 doi
Table 2, p. 3, row 11
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-59 kJ/mol-atom ± 2V5Si3298.15experimentalSi–V[2] Broz 2013
cites Meschel 1998 doi
Table 2, p. 6, row 31
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-59 kJ/mol-atom ± 2Si3V5298.15experimentalExpSi–V[3] Luo 2018
cites Meschel 1998 doi
Table 3, p. 5, row 17
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-58.1 kJ/mol-atom ± 3V5Si3298.15experimentalSi–V[2] Broz 2013
cites Gorelkin 1971
Table 2, p. 6, row 28
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-58.1 kJ/mol-atom ± 3V5Si3298.15experimentalDirect reaction calorimetrySi–V[1] Zhang 2008
cites Gorelkin 1971
Table 2, p. 3, row 2
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-54.2 kJ/mol-atom ± 2V5Si3298.15experimentalSi–V[2] Broz 2013
cites Eremenko 1975
Table 2, p. 6, row 29
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-54.2 kJ/mol-atom ± 2V5Si3298.15experimentalemf measurementSi–V[1] Zhang 2008
cites Eremenko 1976
Table 2, p. 3, row 5
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-50.5 kJ/mol-atom ± 1V5Si3298.15experimentalSi–V[2] Broz 2013
cites Storms 1985
Table 2, p. 6, row 30
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-50.48 kJ/mol-atom ± 1V5Si3298.15experimentalKnudsen cell mass spectrometrySi–V[1] Zhang 2008
cites Storms 1985
Table 2, p. 3, row 9
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-55.4 kJ/mol-atomV5Si30modelSi–V[2] Broz 2013
cites Zhang 2008 doi
Table 2, p. 6, row 34
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-55.4 kJ/mol-atomSi3V5modelCalphadSi–V[3] Luo 2018
cites Zhang 2008 doi
Table 3, p. 5, row 15
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-53.7 kJ/mol-atomV5Si3modelSi–V[2] Broz 2013
cites Zhang 2007 doi
Table 2, p. 6, row 33
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-46 kJ/mol-atomV5Si3modelSi–V[2] Broz 2013
cites Chen 2006 doi
Table 2, p. 6, row 32
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-45.95 kJ/mol-atomV5Si3298.15modelMiedema modelSi–V[1] Zhang 2008
cites Chen 2006 doi
Table 2, p. 3, row 16
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-43.584 kJ/mol-atomSi3V5modelSi–V[3] Luo 2018Table 3, p. 5, row 18
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-17.465 kJ/mol-atomSi3V5modelSi–V[3] Luo 2018Table 3, p. 5, row 19
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-10.955 kJ/mol-atomSi3V5modelSi–V[3] Luo 2018Table 3, p. 5, row 20
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-57.6 kJ/mol-atomSi3V50DFTDFTSi–V[3] Luo 2018
cites Broz 2013 doi
Table 3, p. 5, row 16
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-53.73 kJ/mol-atomV5Si3298.15DFTFirst-principlesSi–V[1] Zhang 2008
cites Zhang 2007 doi
Table 2, p. 3, row 20
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-57.6 kJ/mol-atomV5Si30unspecifiedSi–V[2] Broz 2013Table 2, p. 6, row 27
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Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of Si3V5
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-59kJ/mol-atom20.053.2 (solution_reaction_calorimetry, calibrated)3.2
-59kJ/mol-atom20.053.5 (unknown, calibrated)3.5
-59kJ/mol-atom20.054.1 (experimental_unspecified, cleaned_below_threshold)4.1
-58.1kJ/mol-atom30.053.5 (unknown, calibrated)3.5
-58.1kJ/mol-atom30.053.2 (solution_reaction_calorimetry, calibrated)3.2
-54.2kJ/mol-atom20.053.5 (unknown, calibrated)3.5
-54.2kJ/mol-atom20.054.6 (emf, cleaned_below_threshold)4.6
-50.5kJ/mol-atom10.053.5 (unknown, calibrated)3.5
-50.48kJ/mol-atom10.0054.2 (kems_vapour, calibrated)4.2
-55.4kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-55.4kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-53.7kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-46kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-45.95kJ/mol-atom0.0053.9 (model_calculated, calibrated)3.9
-43.584kJ/mol-atom5.000e-43.9 (model_calculated, calibrated)3.9
-17.465kJ/mol-atom5.000e-43.9 (model_calculated, calibrated)3.9
-10.955kJ/mol-atom5.000e-43.9 (model_calculated, calibrated)3.9
-57.6kJ/mol-atom0.059.966 (dft, calibrated)9.966
-53.73kJ/mol-atom0.0059.966 (dft, calibrated)9.966
-57.6kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of Si3V5
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaabgjfz-53.719-0.556764I4/mcm00no
OQMDoqmd-31069-55.174-0.571839I4/mcm00no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. Chao Zhang, Yong Du, Wei Xiong, Honghui Xu, Philip Nash, Yifang Ouyang et al., Thermodynamic modeling of the V–Si system supported by key experiments, Calphad 32, 320-325 (2008). doi:10.1016/j.calphad.2007.12.005
  2. P. Broz, A.U. Khan, H. Niu, X.-Q. Chen, D. Li, J. Vrestal et al., The system Ta–V–Si: Thermodynamic modeling, Journal of Solid State Chemistry 199, 171-180 (2013). doi:10.1016/j.jssc.2012.12.003
  3. Qun Luo, Kang Li, Qian Li, Thermodynamic investigation of phase equilibria in Al–Si–V system, Journal of Materials Science & Technology 34, 1592-1601 (2018). doi:10.1016/j.jmst.2018.01.004