Si5V6: enthalpy of formation

9 accepted literature formation-enthalpy value(s) (experimental 2, model 4, DFT 1, unspecified 2); experimental median -50.7 kJ/mol-atom (n = 2); Materials Project -49.196 kJ/mol-atom (mp-aaaaablo); OQMD -51.21 kJ/mol-atom (oqmd-31070).

Systems: Si–V

Literature values

Enthalpy of formation of Si5V6 reported in the literature (9)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-50.7 kJ/mol-atom ± 2V6Si5298.15experimentalemf measurementSi–V[1] Zhang 2008
cites Eremenko 1976
Table 2, p. 3, row 6
report
-50.7 kJ/mol-atom ± 2V6Si5298.15experimentalSi–V[2] Broz 2013
cites Eremenko 1975
Table 2, p. 6, row 24
report
-52.8 kJ/mol-atomV6Si50modelSi–V[2] Broz 2013
cites Zhang 2008 doi
Table 2, p. 6, row 22
report
-51.2 kJ/mol-atomV6Si5modelSi–V[2] Broz 2013
cites Chen 2006 doi
Table 2, p. 6, row 26
report
-48.13 kJ/mol-atomV6Si5298.15modelMiedema modelSi–V[1] Zhang 2008
cites Chen 2006 doi
Table 2, p. 3, row 17
report
-48.1 kJ/mol-atomV6Si5modelSi–V[2] Broz 2013
cites Chen 2006 doi
Table 2, p. 6, row 25
report
-51.22 kJ/mol-atomV6Si5298.15DFTFirst-principlesSi–V[1] Zhang 2008
cites Zhang 2007 doi
Table 2, p. 3, row 21
report
-52.7 kJ/mol-atomV6Si50unspecifiedSi–V[2] Broz 2013Table 2, p. 6, row 23
report
-44.1 kJ/mol-atomV6Si50unspecifiedSi–V[2] Broz 2013Table 2, p. 6, row 21
report

Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of Si5V6
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-50.7kJ/mol-atom20.054.6 (emf, cleaned_below_threshold)4.6
-50.7kJ/mol-atom20.053.5 (unknown, calibrated)3.5
-52.8kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-51.2kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-48.13kJ/mol-atom0.0053.9 (model_calculated, calibrated)3.9
-48.1kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-51.22kJ/mol-atom0.0059.966 (dft, calibrated)9.966
-52.7kJ/mol-atom0.053.5 (unknown, calibrated)3.5
-44.1kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of Si5V6
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaaaablo-49.196-0.509879Ibam1.36490.0141no
OQMDoqmd-31070-51.21-0.530758Ibam1.44950.015no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. Chao Zhang, Yong Du, Wei Xiong, Honghui Xu, Philip Nash, Yifang Ouyang et al., Thermodynamic modeling of the V–Si system supported by key experiments, Calphad 32, 320-325 (2008). doi:10.1016/j.calphad.2007.12.005
  2. P. Broz, A.U. Khan, H. Niu, X.-Q. Chen, D. Li, J. Vrestal et al., The system Ta–V–Si: Thermodynamic modeling, Journal of Solid State Chemistry 199, 171-180 (2013). doi:10.1016/j.jssc.2012.12.003