SiV3: enthalpy of formation

16 accepted literature formation-enthalpy value(s) (experimental 10, model 4, DFT 1, unspecified 1); experimental median -41.775 kJ/mol-atom (n = 10); Materials Project -42.956 kJ/mol-atom (mp-aaaaadut); OQMD -45.324 kJ/mol-atom (oqmd-4182).

Systems: Si–V

Literature values

Enthalpy of formation of SiV3 reported in the literature (16)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-46.4 kJ/mol-atom ± 1V3Si298.15experimentalDirect synthesis calorimetrySi–V[1] Zhang 2008
cites Meschel 1998 doi
Table 2, p. 3, row 12
report
-46.4 kJ/mol-atom ± 1V3Si298.15experimentalSi–V[2] Broz 2013
cites Meschel 1998 doi
Table 2, p. 6, row 12
report
-45.1 kJ/mol-atom ± 2V3Si298.15experimentalSi–V[2] Broz 2013
cites Eremenko 1975
Table 2, p. 6, row 10
report
-45.1 kJ/mol-atom ± 2V3Si298.15experimentalemf measurementSi–V[1] Zhang 2008
cites Eremenko 1976
Table 2, p. 3, row 7
report
-41.8 kJ/mol-atom ± 1V3Si298.15experimentalSi–V[2] Broz 2013
cites P 2000
Table 2, p. 6, row 13
report
-41.75 kJ/mol-atom ± 1V3Si298.15experimentalFluorine bomb calorimetrySi–V[1] Zhang 2008
cites OHare 2000 doi
Table 2, p. 3, row 14
report
-38.8 kJ/mol-atom ± 1V3Si298.15experimentalSi–V[2] Broz 2013
cites Storms 1985
Table 2, p. 6, row 11
report
-38.75 kJ/mol-atom ± 1V3Si298.15experimentalKnudsen cell mass spectrometrySi–V[1] Zhang 2008
cites Storms 1985
Table 2, p. 3, row 10
report
-35.3 kJ/mol-atom ± 3V3Si298.15experimentalSi–V[2] Broz 2013
cites Gorelkin 1971
Table 2, p. 6, row 9
report
-35.25 kJ/mol-atom ± 3V3Si298.15experimentalDirect reaction calorimetrySi–V[1] Zhang 2008
cites Gorelkin 1971
Table 2, p. 3, row 3
report
-45.2 kJ/mol-atomV3SimodelSi–V[2] Broz 2013
cites Zhang 2007 doi
Table 2, p. 6, row 15
report
-44.3 kJ/mol-atomV3Si0modelSi–V[2] Broz 2013
cites Zhang 2008 doi
Table 2, p. 6, row 16
report
-33.9 kJ/mol-atomV3SimodelSi–V[2] Broz 2013
cites Chen 2006 doi
Table 2, p. 6, row 14
report
-33.88 kJ/mol-atomV3Si298.15modelMiedema modelSi–V[1] Zhang 2008
cites Chen 2006 doi
Table 2, p. 3, row 18
report
-45.23 kJ/mol-atomV3Si298.15DFTFirst-principlesSi–V[1] Zhang 2008
cites Zhang 2007 doi
Table 2, p. 3, row 22
report
-44.5 kJ/mol-atomV3Si0unspecifiedSi–V[2] Broz 2013Table 2, p. 6, row 8
report

Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of SiV3
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-46.4kJ/mol-atom10.053.2 (solution_reaction_calorimetry, calibrated)3.2
-46.4kJ/mol-atom10.053.5 (unknown, calibrated)3.5
-45.1kJ/mol-atom20.053.5 (unknown, calibrated)3.5
-45.1kJ/mol-atom20.054.6 (emf, cleaned_below_threshold)4.6
-41.8kJ/mol-atom10.053.5 (unknown, calibrated)3.5
-41.75kJ/mol-atom10.0051 (combustion_calorimetry, cleaned_below_threshold)1
-38.8kJ/mol-atom10.053.5 (unknown, calibrated)3.5
-38.75kJ/mol-atom10.0054.2 (kems_vapour, calibrated)4.2
-35.3kJ/mol-atom30.053.5 (unknown, calibrated)3.5
-35.25kJ/mol-atom30.0053.2 (solution_reaction_calorimetry, calibrated)3.2
-45.2kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-44.3kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-33.9kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-33.88kJ/mol-atom0.0053.9 (model_calculated, calibrated)3.9
-45.23kJ/mol-atom0.0059.966 (dft, calibrated)9.966
-44.5kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of SiV3
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaaaadut-42.956-0.445208Pm-3n00no
OQMDoqmd-4182-45.324-0.469756Pm-3n00no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. Chao Zhang, Yong Du, Wei Xiong, Honghui Xu, Philip Nash, Yifang Ouyang et al., Thermodynamic modeling of the V–Si system supported by key experiments, Calphad 32, 320-325 (2008). doi:10.1016/j.calphad.2007.12.005
  2. P. Broz, A.U. Khan, H. Niu, X.-Q. Chen, D. Li, J. Vrestal et al., The system Ta–V–Si: Thermodynamic modeling, Journal of Solid State Chemistry 199, 171-180 (2013). doi:10.1016/j.jssc.2012.12.003