Ce3Si2: enthalpy of formation

8 accepted literature formation-enthalpy value(s) (model 4, unspecified 4); Materials Project -52.537 kJ/mol-atom (mp-aaacjkeh); OQMD -57.374 kJ/mol-atom (oqmd-29190).

Systems: Ce–Si

Literature values

Enthalpy of formation of Ce3Si2 reported in the literature (8)
ValuePhase as printedT (K)ClassMethodSystemSourceLocationQuote
-66.239 kJ/mol-atomCe3Si2298.15modelCalculatedCe–Si[1] Huang 2016Table 8, p. 9, row 24
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-65.6 kJ/mol-atomCe3Si2298.15modelCalculatedCe–Si[1] Huang 2016
cites Kim 2015 doi
Table 8, p. 9, row 17
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-65 kJ/mol-atomCe3Si2298.15modelCalculatedCe–Si[1] Huang 2016
cites Grobner 2004 doi
Table 8, p. 9, row 5
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-60.9 kJ/mol-atomCe3Si2298.15modelCalculatedCe–Si[1] Huang 2016
cites Shukla 2009 doi
Table 8, p. 9, row 11
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-66.239 kJ/mol-atomCe3Si2298.15unspecifiedCe–Si[1] Huang 2016Table 8, p. 9, row 34
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-65.6 kJ/mol-atomCe3Si2298.15unspecifiedCe–Si[1] Huang 2016Table 8, p. 9, row 33
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-65 kJ/mol-atomCe3Si2298.15unspecifiedCe–Si[1] Huang 2016Table 8, p. 9, row 31
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-60.9 kJ/mol-atomCe3Si2298.15unspecifiedCe–Si[1] Huang 2016Table 8, p. 9, row 32
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Uncertainty budget

Components kept separate, in the value's unit (literature SCHEMA.md, UNCERTAINTY_CALIBRATION.md): effective = max(sqrt(max(printed, reading, method)^2 + composition^2 + conversion^2), scatter). The method floor is the robust between-study scatter of the method class in ORCHID (calibrated) or a documented prior; printed values and printed uncertainties are unchanged.

Uncertainty budget of the literature values of Ce3Si2
ValueUnitPrintedReadingMethod (class, basis)CompositionScatterConversionEffective
-66.239kJ/mol-atom5.000e-43.9 (model_calculated, calibrated)3.9
-65.6kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-65kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-60.9kJ/mol-atom0.053.9 (model_calculated, calibrated)3.9
-66.239kJ/mol-atom5.000e-43.5 (unknown, calibrated)3.5
-65.6kJ/mol-atom0.053.5 (unknown, calibrated)3.5
-65kJ/mol-atom0.053.5 (unknown, calibrated)3.5
-60.9kJ/mol-atom0.053.5 (unknown, calibrated)3.5

DFT formation energies

Lowest-energy entries at this composition. Materials Project and OQMD use different energy references and are never averaged. 1 eV/atom = 96.485 kJ/mol-atom.

DFT formation energy of Ce3Si2
SourceEntrykJ/mol-atomeV/atomSpace groupE above hull (kJ/mol-atom)E above hull (eV/atom)Theoretical
Materials Projectmp-aaacjkeh-52.537-0.544505P4/mbm0.33350.0035no
OQMDoqmd-29190-57.374-0.594646P4/mbm00no

DFT sources: A. Jain et al., Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials 1 (2013) 011002. doi:10.1063/1.4812323 (CC BY 4.0); J. E. Saal et al., JOM 65 (2013) 1501-1509; S. Kirklin et al., npj Comput. Mater. 1 (2015) 15010. doi:10.1007/s11837-013-0755-4 (CC BY 4.0);

Sources

  1. Dandan Huang, Shuhong Liu, Ying Tang, Yong Du, Philip Nash, Bo Sundman, Experimental investigation and thermodynamic modeling of the Ce-Si system, Thermochimica Acta 646, 49-58 (2016). doi:10.1016/j.tca.2016.11.003