Thermodynamic assessment of the Ru–Si and Os–Si systems

Y.Q. Liu, G. Shao, K.P. Homewood

Journal of Alloys and Compounds 320 (1) 72-79 (2001) · Elsevier BV

DOI: 10.1016/s0925-8388(01)00931-8

Data: JSON record · id doi:10.1016/s0925-8388(01)00931-8 · metadata: crossref

Roles in ORCHID

• read by ORCHID (values extracted): 81 released values
• cited as the original source of values
• assessment behind a TDB file: OsSi-01Liu-LB.tdb (Os–Si), RuSi-01Liu.tdb (Ru–Si)
• original evaluation behind an assessed (handbook) diagram: Os–Si

Systems

Os–Si, Re–Si, Ru–Si

Evidence in ORCHID

81 values read from this paper (63 accepted), from 3 tables and 10 text passages.

12 values in 2 other papers cite this work as their source.

ESPEI datasets derived: 22 (derived/invariant-brackets/OS-SI/OsSi-01Liu-LB.zpf-00.json …).

Phase-registry phases citing it: phase:os-si:a4-diamond, phase:os-si:b20-msi, phase:os-si:bcc-a2, phase:os-si:fcc-a1, phase:os-si:hcp-a3, phase:os-si:liquid, phase:os-si:os2si3, phase:os-si:ossi2, phase:ru-si:a4-diamond, phase:ru-si:bcc-a2, phase:ru-si:fcc-a1, phase:ru-si:hcp-a3, phase:ru-si:liquid, phase:ru-si:ru2si-c37, phase:ru-si:ru2si3, phase:ru-si:ru4si3, phase:ru-si:rusi

Assessed phase-assemblage records citing it: 10.

Availability

Read by ORCHID: yes (values_extracted, full_text_screened_for_origin). Open-access licence (Crossref license field): none deposited. Crossref is-referenced-by count: 32 (retrieved 2026-10-23).

Relations

Cited by (Crossref reference lists) (4)

• The SGTE collection of binary datasets (2025) [crossref_reference_list]
• Thermodynamic assessment of the Nb–Si–Al system (2004) [crossref_reference_list]
• Thermodynamic description of Ru–Ge–Si ternary system (2009) [crossref_reference_list]
• Thermodynamic analysis of the Re–Si system (2001) [crossref_reference_list]

References (Crossref, publisher-deposited) (20)

• Heat Capacity and Heat Content Measurements on Binary Compounds in the Ru–Si, Ru–Ge, and Ru–Sn Systems (1997) [crossref_reference_list]
• Thermodynamic assessment of the Al-Fe-Si system (1999) [crossref_reference_list]
• Osmium disilicide: Preparation, crystal growth, and physical properties of a new semiconducting compound (1983) [crossref_reference_list]
• Structures and compositions of the silicides of ruthenium, osmium, rhodium and iridium (1962) [crossref_reference_list]
• The osmium-silicon phase diagram (1988) [crossref_reference_list]
• Reaction of thin metal films with SiO2 substrates (1978) [crossref_reference_list]
• Correction terms to pair potential model values of the energy of formation for transition element-polyvalent element phases (1981) [crossref_reference_list]
• The Thermo-Calc databank system (1985) [crossref_reference_list]
• SGTE data for pure elements (1991) [crossref_reference_list]
• Thermodynamic analysis of the Co-Si system (1992) [crossref_reference_list]
• Assessment of the CrSi System (1994) [crossref_reference_list]
• Thermodynamic assessment of the SiZr system (1994) [crossref_reference_list]
• Enthalpies of formation of RuSi and RuSn compounds by direct reaction calorimetry (1997) [crossref_reference_list]
• Preparation and low temperature properties of FeSi-type RuSi (1997) [crossref_reference_list]
• Standard enthalpies of formation of some 4d transition metal silicides by high temperature direct synthesis calorimetry (1998) [crossref_reference_list]
• Standard enthalpies of formation of some 5d transition metal silicides by high temperature direct synthesis calorimetry (1998) [crossref_reference_list]
• The Ruthenium–Silicon system (1999) [crossref_reference_list]
• Thermodynamic reassessment of the Mo–Si and Al–Mo–Si systems (2000) [crossref_reference_list]
• Thermodynamic modeling of the Nb–Si–Ti ternary system (1999) [crossref_reference_list]
• Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability (1982) [crossref_reference_list]

Cited for values by (2)

• Thermodynamic description of Ru–Ge–Si ternary system (2009) — 11 values [orchid_extraction]
• Thermodynamic analysis of the Re–Si system (2001) — 1 values [orchid_extraction]

Cites (values carry this citation) (11)

• The osmium-silicon phase diagram (1988) — 9 values [orchid_extraction]
• The Ruthenium–Silicon system (1999) — 9 values [orchid_extraction]
• Osmium disilicide: Preparation, crystal growth, and physical properties of a new semiconducting compound (1983) — 4 values [orchid_extraction]
• Enthalpies of formation of RuSi and RuSn compounds by direct reaction calorimetry (1997) — 3 values [orchid_extraction]
• Heat Capacity and Heat Content Measurements on Binary Compounds in the Ru–Si, Ru–Ge, and Ru–Sn Systems (1997) — 2 values [orchid_extraction]
• Structures and compositions of the silicides of ruthenium, osmium, rhodium and iridium (1962) — 2 values [orchid_extraction]
• Standard enthalpies of formation of some 4d transition metal silicides by high temperature direct synthesis calorimetry (1998) — 2 values [orchid_extraction]
• Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability (1982) — 2 values [orchid_extraction]
• Reaction of thin metal films with SiO2 substrates (1978) — 1 values [orchid_extraction]
• Correction terms to pair potential model values of the energy of formation for transition element-polyvalent element phases (1981) — 1 values [orchid_extraction]
• Preparation and low temperature properties of FeSi-type RuSi (1997) — 1 values [orchid_extraction]

Reproduced by handbook diagrams (1)

• handbook:okamoto-2010:OS-SI [okamoto_handbook_source_line]

TDB files modelling its system (4)

• tdb:OsSi-01Liu-LB.tdb [sgte_tdb_header]
• tdb:OsSi-01Liu-LB.tdb [orchid_literature_model_link]
• tdb:RuSi-01Liu.tdb [sgte_tdb_header]
• tdb:RuSi-01Liu.tdb [orchid_literature_model_link]

Reassessed by (1)

• Thermodynamic description of Ru–Ge–Si ternary system (2009) [citation+same-system]

Data papers used (11)

• The osmium-silicon phase diagram (1988) — 9 values [orchid_extraction]
• The Ruthenium–Silicon system (1999) — 9 values [orchid_extraction]
• Osmium disilicide: Preparation, crystal growth, and physical properties of a new semiconducting compound (1983) — 4 values [orchid_extraction]
• Enthalpies of formation of RuSi and RuSn compounds by direct reaction calorimetry (1997) — 3 values [orchid_extraction]
• Heat Capacity and Heat Content Measurements on Binary Compounds in the Ru–Si, Ru–Ge, and Ru–Sn Systems (1997) — 2 values [orchid_extraction]
• Structures and compositions of the silicides of ruthenium, osmium, rhodium and iridium (1962) — 2 values [orchid_extraction]
• Standard enthalpies of formation of some 4d transition metal silicides by high temperature direct synthesis calorimetry (1998) — 2 values [orchid_extraction]
• Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability (1982) — 2 values [orchid_extraction]
• Reaction of thin metal films with SiO2 substrates (1978) — 1 values [orchid_extraction]
• Correction terms to pair potential model values of the energy of formation for transition element-polyvalent element phases (1981) — 1 values [orchid_extraction]
• Preparation and low temperature properties of FeSi-type RuSi (1997) — 1 values [orchid_extraction]

Used in (assessments / papers that took values from it) (2)

• Thermodynamic description of Ru–Ge–Si ternary system (2009) — 11 values [orchid_extraction]
• Thermodynamic analysis of the Re–Si system (2001) — 1 values [orchid_extraction]